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 2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
* Pb-Free Packages are Available* * Device Marking: Device Type, e.g., 2N5550, Date Code
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COLLECTOR 3 2 BASE
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg -55 to +150 W mW/C C 55xx Y WW Specific Device Code = Year = Work Week mW mW/C 12 TO-92 CASE 29 STYLE 1 3 2N 55xx YWW 2N5550 2N5551 140 160 6.0 600 160 180 Unit Vdc Vdc Vdc mAdc 1 EMITTER
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
Preferred devices are recommended choices for future use and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2004
1
June, 2004 - Rev. 3
Publication Order Number: 2N5550/D
2N5550, 2N5551
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0 ) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) (VCB = 120 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 VCE(sat) Both Types 2N5550 2N5551 VBE(sat) Both Types 2N5550 2N5551 - - - 1.0 1.2 1.0 - - - 0.15 0.25 0.20 Vdc 60 80 60 80 20 30 - - 250 250 - - Vdc - 2N5550 2N5551 2N5550 2N5551 IEBO V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 V(BR)EBO ICBO - - - - - 100 50 100 50 50 nAdc mAdc nAdc 160 180 6.0 - - - Vdc 140 160 - - Vdc Vdc Symbol Min Max Unit
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
fT Cobo Cibo 2N5550 2N5551 hfe NF 2N5550 2N5551
100 -
300 6.0
MHz pF pF
- - 50
30 20 200 - dB
- -
10 8.0
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2
2N5550, 2N5551
ORDERING INFORMATION
Device 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM 2N5551RLRP 2N55551ZL1 Package TO-92 TO-92 TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) TO-92 TO-92 TO-92 TO-92 TO-92 Shipping 5,000 Unit / Bulk 2,000 Tape & Reel 2,000 Tape & Ammo Box 2,000 Tape & Ammo Box 5,000 Unit / Bulk 5,000 Unit / Bulk 2,000 Tape & Reel 2,000 Tape & Reel 2,000 Tape & Ammo Box 2,000 Tape & Ammo Box 2,000 Tape & Ammo Box
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
500 300 h FE, DC CURRENT GAIN 200 100 -55 C 50 30 20 10 7.0 5.0 0.1 TJ = 125C 25C VCE = 1.0 V VCE = 5.0 V
0.2
0.3
0.5
0.7
1.0
3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA)
10
20
30
50
70
100
Figure 1. DC Current Gain
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3
2N5550, 2N5551
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA
Figure 2. Collector Saturation Region
101 VCE = 30 V IC, COLLECTOR CURRENT ( A) 100 10-1 10-2 10-3 10-4 10-5 0.4 TJ = 125C
IC = ICES
75C REVERSE 25C FORWARD
0.3
0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS)
0.5
0.6
Figure 3. Collector Cut-Off Region
V, TEMPERATURE COEFFICIENT (mV/C)
1.0 0.8 V, VOLTAGE (VOLTS)
TJ = 25C
2.5 2.0 1.5 1.0 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 qVB for VBE(sat) qVC for VCE(sat) TJ = - 55C to +135C
VBE(sat) @ IC/IB = 10 0.6
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100
Figure 4. "On" Voltages
Figure 5. Temperature Coefficients
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4
2N5550, 2N5551
100 70 50 10.2 V Vin 10 ms INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 mF C, CAPACITANCE (pF) VBB -8.8 V 100 RB 5.1 k Vin 100 1N914 3.0 k VCC 30 V RC Vout 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 Cibo Cobo
TJ = 25C
Values Shown are for IC @ 10 mA
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
1000 500 300 t, TIME (ns) 200 100 50 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V tr @ VCC = 30 V IC/IB = 10 TJ = 25C tr @ VCC = 120 V
5000 3000 2000 1000 500 300 200 100 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 100 200 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 100 200 ts @ VCC = 120 V tf @ VCC = 120 V tf @ VCC = 30 V IC/IB = 10 TJ = 25C
Figure 8. Turn-On Time
t, TIME (ns)
Figure 9. Turn-Off Time
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5
2N5550, 2N5551
PACKAGE DIMENSIONS TO-92 TO-226AA CASE 29-11 ISSUE AL
A R P L
SEATING PLANE
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
K
XX G H V
1
D J C SECTION X-X N N
DIM A B C D G H J K L N P R V
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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6
2N5550/D


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